Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET
نویسندگان
چکیده
منابع مشابه
Hot-Carrier-Induced Degradation for Partially Depleted SOI 0.25–0.1 m CMOSFET With 2-nm Thin Gate Oxide
Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 m with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) ...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2020
ISSN: 1349-2543
DOI: 10.1587/elex.17.20200001